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Silicon Schottky Diode BAT 65 Features * Low-power Schottky rectifier diode * For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes * Miniature plastic package for surface mounting (SMD) Type BAT 65 1) Marking White/C Ordering Code 1 Q62702-A990 C Pin Configuration 2 A Package1) SOD-123 Dimensions see page 313. Maximum Ratings Parameter Reverse voltage Forward current Average forward current, f = 50 Hz Surage forward current, t 10 ms Total power dissipation, TS 100 C Junction temperature Storage temperature range Symbol VR IF IFAV IFSM Ptot Tj Tstg Limit Values 40 750 500 2.5 600 150 - 55 ... + 150 Unit V mA mA A mW C C Semiconductor Group 1 05.96 BAT 65 Thermal Resistance Parameter Junction - soldering point Junction to ambient1) 1) Symbol Limit Values 80 150 Unit K/W K/W RthJS RthJA Package mounted on epoxy PCB 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Electrical Characteristics TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 30 V VR = 30 V, TA = 65 C Forward voltage IF = 10 mA IF = 100 mA IF = 250 mA IF = 750 mA Diode capacitance VR = 10 V, f = 1 MHz Symbol Limit Values min. typ. - - 0.305 0.38 0.44 0.580 8.4 max. A - - 50 900 V - - - - 0.40 - 0.70 - pF - 12 Unit IR VF CT Semiconductor Group 2 BAT 65 Forward Current IF = f (VF) Reverse Current IR = f (VR) Forward Current IF = f (TS; TA1)) 1) Package mounted on epoxy PCB 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 3 BAT 65 Permissible Load RthJS = f (tP) Permissible Pulse Load Ifmax/IfDC = f (tP) Semiconductor Group 4 |
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